vishay siliconix si3951dv document number: 73700 s09-2275-rev. c, 02-nov-09 www.vishay.com 1 dual p-channel 20-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? pwm optimized ? 100 % r g tested ? compliant to rohs directive 2002/95/ec product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 20 0.115 at v gs = - 4.5 v - 2.7 3.2 nc 0.205 at v gs = - 2.5 v - 2.0 orderin g information: si3951d v -t1-e3 (lead (p b )-free) si3951d v -t1-ge3 (lead (p b )-free and halogen-free) t so p-6 top view 6 4 1 2 3 5 2.85 mm 3 mm d2 g2 s1 s2 d1 g1 marking code mg xxx lot tracea b ility and date code part # code s 2 g 2 d 2 p-channel mosfet s 1 g 1 d 1 p-channel mosfet notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d - 2.7 a t c = 70 c - 2.2 t a = 25 c - 2.5 b, c t a = 70 c - 2.0 b, c pulsed drain current i dm 10 continuous source-drain diode current t c = 25 c i s - 1.67 t a = 25 c - 0.95 b, c maximum power dissipation a t c = 25 c p d 2.0 w t c = 70 c 1.3 t a = 25 c 1.14 b, c t a = 70 c 0.73 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thja 93 110 c/w maximum junction-to-foot (drain) steady state r thjf 75 90
www.vishay.com 2 document number: 73700 s09-2275-rev. c, 02-nov-09 vishay siliconix si3951dv notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 16.7 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.6 - 1.5 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 10 drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 2.5 a 0.092 0.115 v gs = - 2.5 v, i d = - 1. 8 a 0.164 0.205 forward transconductance a g fs v ds = - 10 v, i d = - 2.5 a 5.5 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 250 pf output capacitance c oss 8 0 reverse transfer capacitance c rss 55 total gate charge q g v ds = - 10 v, v gs = - 5.0 v, i d = - 2.5 a 3.4 5.1 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 2.5 a 3.2 5 gate-source charge q gs 0.5 gate-drain charge q gd 1.4 gate resistance r g f = 1 mhz 8 .5 13 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 5 i d ? - 2 a, v gen = - 4.5 v, r g = 1 914 ns rise time t r 30 45 turn-off delay time t d(off) 32 4 8 fall time t f 16 24 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.7 a pulse diode forward current i sm - 10 body diode voltage v sd i s = - 2.0 a - 0. 8 - 1.2 v body diode reverse recovery time t rr i f = - 2.0 a, di/dt = 100 a/s, t j = 25 c 17 26 ns body diode reverse recovery charge q rr 5 8 nc reverse recovery fall time t a 14 ns reverse recovery rise time t b 3
document number: 73700 s09-2275-rev. c, 02-nov-09 www.vishay.com 3 vishay siliconix si3951dv typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 2 4 6 8 10 01234 v gs = 5 v thr u 3 v v gs = 1.5 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d v gs = 2.5 v v gs = 2.0 v 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0246810 i d - drain c u rrent (a) r ) n o ( s d m ( e c n a t s i s e r - n o - ) v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 01234 i d = 2.6 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g v gs = 10 v v gs = 16 v transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d t c = 25 c t c = 125 c t c = - 55 c 0 100 200 300 400 500 0 4 8 121620 c rss c oss c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 4.5 v , i d = 2.4 a v gs = 2.5 v , i d = 1.8 a
www.vishay.com 4 document number: 73700 s09-2275-rev. c, 02-nov-09 vishay siliconix si3951dv typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.2 0.00 0.2 0.4 0.6 0.8 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s 1 10 100 0.1 0.01 0.001 t a = 150 c t a = 25 c 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - temperat u re ( c) v ) h t ( s g ) v ( i d = 250 a on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.04 0.12 0.20 0.28 0.36 12345 i d = 2.7 a v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( e c n a t s i s e r - n o e c r u o s - o t - n i a r d - ) t a = 25 c t a = 125 c 0.01 0 1 6 8 2 4 10 30 0.1 ) w ( r e w o p time (s) safe operating area 100 1 0.1 1 10 100 0.001 10 t a = 25 c single p u lse ) a ( t n e r r u c n i a r d - i d 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 0.01 10 ms 100 ms dc 1 s 10 s limited b y r ds(on) *
document number: 73700 s09-2275-rev. c, 02-nov-09 www.vishay.com 5 vishay siliconix si3951dv typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 1 2 3 4 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d - t c - case temperat u re (c) power, junction-to-foot 0.0 0.5 1.0 1.5 2 . 0 0 25 50 75 100 125 150 t c - case temperat u re (c) r ( w ) e w o p
www.vishay.com 6 document number: 73700 s09-2275-rev. c, 02-nov-09 vishay siliconix si3951dv typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73700 . normalized thermal transient im pedance, junction-to-ambient sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 d u ty cycle = 0.5 0.2 0.1 0.05 0.02 single p u lse 100 1. d u ty cycle, d = 2. per unit base = r thja = 130 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 1 10 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t
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